radar pulsed power transistor 115w, 2.7-2.9 ghz, 200s pulse, 10% duty m/a-com products preliminary, 10 aug 07 MAPR-002731-115M00 1 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? npn silicon microwav e power transistors ? common base configuration ? broadband class c operation ? high efficiency inter-digitized geometry ? diffused emitter ballasting resistors ? gold metallization system ? internal input and output impedance matching ? hermetic metal/ceramic package ? rohs compliant ? device marked as pr2731-115m electrical specifications: t c = 25 5c ( room ambient ) parameter test conditions frequency symbol min max units collector-emitter breakdown voltage i c = 40ma bv ces 65 - v collector-emitter leakage current v ce = 36v i ces - 7.5 ma thermal resistance vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz r th(jc) - tbd c/w output power vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz p out 115 - w power gain vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz g p 7.6 - db gain flatness vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz g - 1.0 db collector efficiency vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz c 38 - % pulse droop vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz droop - 0.5 db input return loss vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz rl - -10 db load mismatch tolerance vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz vswr-t - 2:1 - load mismatch stability vcc = 36v, pin = 20w f = 2.7, 2.9, 3.1 ghz vswr-s - 1.5:1 - absolute maximum ratings at 25c parameter symbol rating units collector-emitter voltage v ces 65 v emitter-base voltage v ebo 3.0 v collector current (peak) i c tbd a power dissipation @ +25c p tot tbd w storage temperature t stg -65 to +200 c junction temperature t j 200 c outline drawing
radar pulsed power transistor 115w, 2.7-2.9 ghz, 200s pulse, 10% duty m/a-com products preliminary, 10 aug 07 MAPR-002731-115M00 2 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance gain vs. frequency collector efficiency vs. frequency freq. (ghz) pin (w) pout (w) gain (db) gain (db) eff (%) rl (db) vswr-s (1.5:1) vswr-t (2:1) 2.7 20 140 8.45 - 40.1 -11.8 s p 2.9 20 133 8.23 - 38.9 -16.6 s p 3.1 20 128 8.06 0.39 39.8 -15.3 s p ic (a) 9.16 8.97 8.49 droop (db) 0.00 0.12 0.26 7.5 8.0 8.5 9.0 9.5 2.7 2.8 2.9 3.0 3.1 fr e q (ghz ) gain (db) 30 35 40 45 50 2.7 2.8 2.9 3.0 3.1 fr e q (ghz ) efficiency (%)
radar pulsed power transistor 115w, 2.7-2.9 ghz, 200s pulse, 10% duty m/a-com products preliminary, 10 aug 07 MAPR-002731-115M00 3 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. rf power transfer curve (output power vs. input power) f (ghz) z if ( ? ) z of ( ? ) 2.7 4.7 - j6.1 2.4 - j2.4 2.8 4.5 - j5.8 2.4 - j2.2 2.9 4.4 - j5.7 2.4 - j2.0 3.0 4.3 - j5.5 2.4 - j1.8 3.1 4.1 - j5.3 2.4 - j1.6 rf test fixture impedance 20 60 100 140 180 12 16 20 24 28 pin (w a tts) pout (watts) 2.7 ghz 2.9 ghz 3.1 ghz
radar pulsed power transistor 115w, 2.7-2.9 ghz, 200s pulse, 10% duty m/a-com products preliminary, 10 aug 07 MAPR-002731-115M00 4 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly
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